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Chang-Beom Eom is the Raymond R. Holton Chair Professor and Theodore H. Geballe Professor in the College of Engineering and Physics at the University of Wisconsin-Madison. He received his Ph.D. in Materials Science and Engineering from Stanford University in 1991. He then spent two years at AT&T Bell Laboratories in Murray Hill, New Jersey as a postdoctoral member of the technical staff, before joining the faculty at Duke University in 1993 as an Associate Professor. He joined the University of Wisconsin-Madison in 2000, and he has since directed the Oxide Laboratory. His research focuses on epitaxial thin film heterostructures of complex oxides, including ferroelectrics, piezoelectrics, multiferroics, superconductors, and novel two-dimensional electron gases at oxide interfaces, with an emphasis on understanding fundamental solid state phenomena and developing novel device applications. He received the National Science Foundation Young Investigator Award in 1994, the David & Lucile Packard Fellowship in 1995, the 2007 Ho-Am Prize in Engineering and 2020 Vannevar Bush Faculty Fellowship. He is a fellow of the American Physical Society and of the Materials Research Society (MRS). He was elected as a fellow of the American Association for the Advancement of Science (AAAS) in 2019. He serves on the MRS Board of Directors and is an Associate Editor of APL Materials.
Semiconductor nanostructures are fundamental building blocks for novel electronic, optoelectronic, photonic and spintronic nanodevices. The control of their physical properties at the nanoscale is the key to achieve the desired functionality. This symposium intends to give a snapshot of the recent progress in nanoscale research and engineering of semiconductor nanostructures with focus on efficient doping, processing and minimising or controllably introducing defects. It will address advanced characterisation as well as theoretical approaches and simulation schemes that enhance the understanding of physical and chemical phenomena at the nanometre scale. Defects play a critical role in any semiconductor device and their importance is potentiated in nanomaterials, where surface to volume ratio is strongly enhanced and defects at surfaces and interfaces are more often determining device performance. Point, line and extended defects as well as surface modification and functionalisation in a broad range of semiconductor materials and devices will be considered. This includes defects in novel two-dimensional materials beyond graphene, as well as semiconductor nanostructures relevant to quantum emission processes based on deterministic impurities and defect complexes. Contributions addressing wide bandgap nitride, oxide, and carbide semiconductors with emerging applications in electronics for lighting, sensing, energy applications, and more, are expected.